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Chemical mechanical planarization of patterned InP in shallow trench isolation (STI) template structures using hydrogen peroxide-based silica slurries containing oxalic acid or citric acid

dc.contributor.authorMatovu, John B.
dc.contributor.authorOng, Patrick
dc.contributor.authorTeugels, Lieve
dc.contributor.authorLeunissen, Peter
dc.contributor.authorBabu, S. V.
dc.date.accessioned2021-10-22T03:38:47Z
dc.date.available2021-10-22T03:38:47Z
dc.date.issued2014
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24228
dc.sourceIIOimport
dc.titleChemical mechanical planarization of patterned InP in shallow trench isolation (STI) template structures using hydrogen peroxide-based silica slurries containing oxalic acid or citric acid
dc.typeJournal article
dc.contributor.imecauthorOng, Patrick
dc.contributor.imecauthorTeugels, Lieve
dc.contributor.orcidimecOng, Patrick::0000-0002-2072-292X
dc.contributor.orcidimecTeugels, Lieve::0000-0002-6613-9414
dc.source.peerreviewyes
dc.source.beginpage17
dc.source.endpage21
dc.source.journalMicroelectronic Engineering
dc.source.volume116
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0167931713006849
imec.availabilityPublished - imec


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