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Performance and reliability of high-mobility Si0.55Ge0.45 p-channel FinFETs based on epitaxial cladding of Si fins

dc.contributor.authorMertens, Hans
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorFranco, Jacopo
dc.contributor.authorLee, Jae Woo
dc.contributor.authorBrunco, David
dc.contributor.authorEneman, Geert
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorMitard, Jerome
dc.contributor.authorKubicek, Stefan
dc.contributor.authorDevriendt, Katia
dc.contributor.authorTsvetanova, Diana
dc.contributor.authorMilenin, Alexey
dc.contributor.authorVrancken, Christa
dc.contributor.authorGeypen, Jef
dc.contributor.authorBender, Hugo
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorBarla, Kathy
dc.contributor.authorCollaert, Nadine
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-22T03:45:54Z
dc.date.available2021-10-22T03:45:54Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24246
dc.sourceIIOimport
dc.titlePerformance and reliability of high-mobility Si0.55Ge0.45 p-channel FinFETs based on epitaxial cladding of Si fins
dc.typeProceedings paper
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDevriendt, Katia
dc.contributor.imecauthorTsvetanova, Diana
dc.contributor.imecauthorMilenin, Alexey
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorGeypen, Jef
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorBarla, Kathy
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecDevriendt, Katia::0000-0002-0662-7926
dc.contributor.orcidimecMilenin, Alexey::0000-0003-0747-0462
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage58
dc.source.endpage59
dc.source.conferenceSymposium on VLSI Technology
dc.source.conferencedate9/06/2014
dc.source.conferencelocationHonolulu, HI USA
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6894360
imec.availabilityPublished - open access


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