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First-principles studies of the defect formation in III-V FETs grown by aspect ratio trapping

dc.contributor.authorMinari, Hideki
dc.contributor.authorYoshida, Shinichi
dc.contributor.authorSawada, Ken
dc.contributor.authorNakazawa, Masashi
dc.contributor.authorCaymax, Matty
dc.contributor.authorMerckling, Clement
dc.contributor.authorWaldron, Niamh
dc.contributor.authorGuo, Weiming
dc.contributor.authorJiang, Sijia
dc.contributor.authorCollaert, Nadine
dc.contributor.authorSimoen, Eddy
dc.contributor.authorLin, Dennis
dc.contributor.authorPourtois, Geoffrey
dc.date.accessioned2021-10-22T03:49:54Z
dc.date.available2021-10-22T03:49:54Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24256
dc.sourceIIOimport
dc.titleFirst-principles studies of the defect formation in III-V FETs grown by aspect ratio trapping
dc.typeMeeting abstract
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.source.peerreviewno
dc.source.beginpage1646
dc.source.conference226th Meeting of The Electrochemical Society
dc.source.conferencedate5/10/2014
dc.source.conferencelocationCancun Mexico
dc.identifier.urlhttp://ma.ecsdl.org/content/MA2014-02/31/1646.abstract
imec.availabilityPublished - imec
imec.internalnotesMeeting Abstracts; Vol. MA2014-02


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