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First-principles studies of the defect formation in III-V FETs grown by aspect ratio trapping

dc.contributor.authorMinari, Hideki
dc.contributor.authorYoshida, Shinichi
dc.contributor.authorSawada, Ken
dc.contributor.authorNakazawa, Masashi
dc.contributor.authorMerckling, Clement
dc.contributor.authorWaldron, Niamh
dc.contributor.authorGuo, Weiming
dc.contributor.authorJiang, Sijia
dc.contributor.authorCollaert, Nadine
dc.contributor.authorSimoen, Eddy
dc.contributor.authorLin, Dennis
dc.contributor.authorCaymax, Matty
dc.contributor.authorPourtois, Geoffrey
dc.date.accessioned2021-10-22T03:50:24Z
dc.date.available2021-10-22T03:50:24Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24257
dc.sourceIIOimport
dc.titleFirst-principles studies of the defect formation in III-V FETs grown by aspect ratio trapping
dc.typeProceedings paper
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.source.peerreviewyes
dc.source.beginpage111
dc.source.endpage123
dc.source.conferenceHigh Purity and High Mobility Semiconductors 13
dc.source.conferencedate5/10/2014
dc.source.conferencelocationCancun Mexico
dc.identifier.urlhttp://ecst.ecsdl.org/content/64/11/111.abstract
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 65, Issue 11


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