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Low threshold current density InGaAs/AlGaAs DQW asymmetric laser structure with optical trap layer

dc.contributor.authorBuda, M.
dc.contributor.authorIordache, G.
dc.contributor.authorAcket, G. A.
dc.contributor.authorvan de Roer, T.
dc.contributor.authorvan Roy, B.
dc.contributor.authorSmalbrugge, E.
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorSys, Carl
dc.date.accessioned2021-09-30T11:31:40Z
dc.date.available2021-09-30T11:31:40Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2427
dc.sourceIIOimport
dc.titleLow threshold current density InGaAs/AlGaAs DQW asymmetric laser structure with optical trap layer
dc.typeProceedings paper
dc.contributor.imecauthorMoerman, Ingrid
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage85
dc.source.endpage88
dc.source.conferenceProceedings 3rd Annual Symposium of the IEEE/LEOS Benelux Chapter
dc.source.conferencedate26/11/1998
dc.source.conferencelocationGent Belgium
imec.availabilityPublished - open access


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