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Back-channel-etch amorphous indium-gallium-zinc oxide thin-film transistors: The impact of source/drain metal etch and final passivation

dc.contributor.authorNag, Manoj
dc.contributor.authorBhoolokam, Ajay
dc.contributor.authorSteudel, Soeren
dc.contributor.authorMyny, Kris
dc.contributor.authorMaas, Joris
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHeremans, Paul
dc.date.accessioned2021-10-22T04:07:11Z
dc.date.available2021-10-22T04:07:11Z
dc.date.issued2014
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24298
dc.sourceIIOimport
dc.titleBack-channel-etch amorphous indium-gallium-zinc oxide thin-film transistors: The impact of source/drain metal etch and final passivation
dc.typeJournal article
dc.contributor.imecauthorNag, Manoj
dc.contributor.imecauthorMyny, Kris
dc.contributor.imecauthorMaas, Joris
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecMyny, Kris::0000-0002-5230-495X
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage111401
dc.source.journalJapanese Journal of Applied Physics
dc.source.issue11
dc.source.volume53
imec.availabilityPublished - imec


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