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Accurate prediction of device performance : Reconstructing 2D-active dopant profiles from 2D-carrier profiles in the presence of extensive mobile carrier diffusion

dc.contributor.authorNazir, Aftab
dc.contributor.authorEyben, Pierre
dc.contributor.authorClarysse, Trudo
dc.contributor.authorSpessot, Alessio
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorSchram, Tom
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-22T04:13:27Z
dc.date.available2021-10-22T04:13:27Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24312
dc.sourceIIOimport
dc.titleAccurate prediction of device performance : Reconstructing 2D-active dopant profiles from 2D-carrier profiles in the presence of extensive mobile carrier diffusion
dc.typeMeeting abstract
dc.contributor.imecauthorNazir, Aftab
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorSpessot, Alessio
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.source.peerreviewno
dc.source.beginpageBBB3.02
dc.source.conferenceMRS Spring Meeting Symposium BBB: Advances in Scanning Probe Microscopy for Material Properties
dc.source.conferencedate21/04/2014
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec


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