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Large improvement of phosphorus incorportion efficiency in n-type chemical vapor deposition of diamond

dc.contributor.authorOhtani, Ryota
dc.contributor.authorYamamoto, Takashi
dc.contributor.authorJanssens, Stoffel
dc.contributor.authorYamasaki, Satoshi
dc.contributor.authorKoizumi, Satoshi
dc.date.accessioned2021-10-22T04:25:05Z
dc.date.available2021-10-22T04:25:05Z
dc.date.issued2014
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24339
dc.sourceIIOimport
dc.titleLarge improvement of phosphorus incorportion efficiency in n-type chemical vapor deposition of diamond
dc.typeJournal article
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage232106
dc.source.journalApplied Physics Letters
dc.source.issue23
dc.source.volume105
imec.availabilityPublished - open access


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