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Analysis and design of a high power, high gain SiGe BiCMOS output stage for use in a millimeter-wave power amplifier

dc.contributor.authorPierco, Ramses
dc.contributor.authorDe Keulenaer, Timothy
dc.contributor.authorTorfs, Guy
dc.contributor.authorBauwelinck, Johan
dc.date.accessioned2021-10-22T04:46:06Z
dc.date.available2021-10-22T04:46:06Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24388
dc.sourceIIOimport
dc.titleAnalysis and design of a high power, high gain SiGe BiCMOS output stage for use in a millimeter-wave power amplifier
dc.typeProceedings paper
dc.contributor.imecauthorTorfs, Guy
dc.contributor.imecauthorBauwelinck, Johan
dc.contributor.orcidimecTorfs, Guy::0000-0003-1817-5370
dc.contributor.orcidimecBauwelinck, Johan::0000-0001-5254-2408
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1
dc.source.endpage4
dc.source.conference10th Conference on Ph.D. Research in Microelectronics and Electronics - PRIME
dc.source.conferencedate29/06/2014
dc.source.conferencelocationGrenoble France
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6872749
imec.availabilityPublished - open access


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