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Advanced processes for Si:P and Si:C:P epitaxial growth and low-temperature surface cleaning

dc.contributor.authorProfijt, Harald
dc.contributor.authorRosseel, Erik
dc.contributor.authorTolle, John
dc.contributor.authorWeeks, K.D.
dc.contributor.authorLoo, Roger
dc.contributor.authorMehta, Sandeep
dc.contributor.authorMaes, Jan
dc.date.accessioned2021-10-22T04:51:33Z
dc.date.available2021-10-22T04:51:33Z
dc.date.issued2014-11
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24400
dc.sourceIIOimport
dc.titleAdvanced processes for Si:P and Si:C:P epitaxial growth and low-temperature surface cleaning
dc.typeMeeting abstract
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorMaes, Jan
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.conferenceWorkshop on Atomically Controlled Processing for Ultra-large Scale Integration
dc.source.conferencedate13/11/2014
dc.source.conferencelocationLeuven Belgium
imec.availabilityPublished - imec


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