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Ground plane influence on enhanced dynamic threshold UTBB SOI nMOSFETs

dc.contributor.authorSasaki, K.R.A.
dc.contributor.authorManini, M.B
dc.contributor.authorMartino, J.A
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorSimoen, Eddy
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-22T05:27:47Z
dc.date.available2021-10-22T05:27:47Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24478
dc.sourceIIOimport
dc.titleGround plane influence on enhanced dynamic threshold UTBB SOI nMOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage57
dc.source.endpage60
dc.source.conference9th International Caribbean Conference on Devices, Circuits and Systems - ICCDCS
dc.source.conferencedate2/04/2014
dc.source.conferencelocationPlaya del Carmen Mexico
imec.availabilityPublished - imec


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