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Silicon film thickness influence on enhanced dynamic threshold UTBB SOI nMOSFETs

dc.contributor.authorSasaki, Katia RA
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorMartino, Joao A.
dc.date.accessioned2021-10-22T05:28:14Z
dc.date.available2021-10-22T05:28:14Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24479
dc.sourceIIOimport
dc.titleSilicon film thickness influence on enhanced dynamic threshold UTBB SOI nMOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage1
dc.source.endpage6
dc.source.conference29th International Symposium on Microelectronics Technology and Devices - SBMICRO
dc.source.conferencedate1/09/2014
dc.source.conferencelocationAracaju Brazil
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6940089
imec.availabilityPublished - imec


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