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Optimized design of a Si-cap layer in strained-SiGe channel p-MOSFETs based on computational and experimental approaches
Publication:
Optimized design of a Si-cap layer in strained-SiGe channel p-MOSFETs based on computational and experimental approaches
Date
2014
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Sato-Iwanaga, Junko
;
Inoue, Akira
;
Sorada, Haruyuki
;
Takagi, Takeshi
;
Rothschild, Aude
;
Loo, Roger
;
Biesemans, Serge
;
Ito, Choshu
;
Liu, Yang
;
Dutton, Robert W.
;
Tsuchiya, Hideaki
Journal
Solid-State Electronics
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1924
since deposited on 2021-10-22
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Acq. date: 2025-10-25
Citations
Metrics
Views
1924
since deposited on 2021-10-22
458
item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations