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Border traps in InGaAs nMOSFETs assessed by low-frequency noise

dc.contributor.authorScarpino, Mercedes
dc.contributor.authorGupta, Somya
dc.contributor.authorLin, Dennis
dc.contributor.authorAlian, AliReza
dc.contributor.authorCrupi, Felice
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.authorSimoen, Eddy
dc.date.accessioned2021-10-22T05:32:02Z
dc.date.available2021-10-22T05:32:02Z
dc.date.issued2014
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24487
dc.sourceIIOimport
dc.titleBorder traps in InGaAs nMOSFETs assessed by low-frequency noise
dc.typeJournal article
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage720
dc.source.endpage722
dc.source.journalIEEE Electron Device Letters
dc.source.issue7
dc.source.volume35
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6819797&queryText%3DBorder+traps+in+InGaAs+nMOSFETs+assessed+by+l
imec.availabilityPublished - imec


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