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dc.contributor.authorScarpino, Mercedes
dc.contributor.authorLin, Dennis
dc.contributor.authorAlian, AliReza
dc.contributor.authorMerckling, Clement
dc.contributor.authorCrupi, Felice
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-22T05:32:32Z
dc.date.available2021-10-22T05:32:32Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24488
dc.sourceIIOimport
dc.titleImpact of pre- and post-growth treatment on the low-frequency noise of InGaAs nMOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage115
dc.source.endpage120
dc.source.conferenceChina Semiconductor Technology International Conference - CSTIC
dc.source.conferencedate16/03/2014
dc.source.conferencelocationPennington, NJ USA
dc.identifier.urlhttp://ecst.ecsdl.org/content/60/1/115.abstract
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 60, Issue 1


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