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Ni(Pt) silicide with improved thermal stability for application in DRAM periphery and replacement metal gate devices

dc.contributor.authorSchram, Tom
dc.contributor.authorSpessot, Alessio
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorRosseel, Erik
dc.contributor.authorCaillat, Christian
dc.contributor.authorHoriguchi, Naoto
dc.date.accessioned2021-10-22T05:36:58Z
dc.date.available2021-10-22T05:36:58Z
dc.date.issued2014
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24498
dc.sourceIIOimport
dc.titleNi(Pt) silicide with improved thermal stability for application in DRAM periphery and replacement metal gate devices
dc.typeJournal article
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorSpessot, Alessio
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage157
dc.source.endpage162
dc.source.journalMicroelectronic Engineering
dc.source.volume120
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0167931713007004
imec.availabilityPublished - open access


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