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Direct estimation of captive cross sections in the presence of low capture: application of the identifcation of quenched-in deep-level defects in Ge

dc.contributor.authorSegers, Siegfried
dc.contributor.authorLauwaert, Johan
dc.contributor.authorClauws, Paul
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorCallens, Freddy
dc.contributor.authorVrielinck, Henk
dc.date.accessioned2021-10-22T05:38:46Z
dc.date.available2021-10-22T05:38:46Z
dc.date.issued2014
dc.identifier.issn0268-1242
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24502
dc.sourceIIOimport
dc.titleDirect estimation of captive cross sections in the presence of low capture: application of the identifcation of quenched-in deep-level defects in Ge
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage125007
dc.source.journalSemiconductor Science and Technology
dc.source.issue12
dc.source.volume29
imec.availabilityPublished - imec


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