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dc.contributor.authorSimoen, Eddy
dc.contributor.authorFederico, Antonio
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorSchram, Tom
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorCho, Moon Ju
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorThean, Aaron
dc.contributor.authorCrupi, Felice
dc.contributor.authorSpessot, Alessio
dc.contributor.authorCaillat, Chirstian
dc.contributor.authorFazan, Pierre
dc.contributor.authorNa, Hoon Joo
dc.contributor.authorSon, Yunik
dc.contributor.authorNoh, Kyung Bong
dc.date.accessioned2021-10-22T05:51:28Z
dc.date.available2021-10-22T05:51:28Z
dc.date.issued2014
dc.identifier.issn0268-1242
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24528
dc.sourceIIOimport
dc.titleLow-frequency noise assessment of border traps in Al2O3 capped DRAM peripheral MOSFETs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorSpessot, Alessio
dc.contributor.imecauthorFazan, Pierre
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage115015
dc.source.journalSemiconductor Science and Technology
dc.source.issue11
dc.source.volume29
dc.identifier.urlhttp://iopscience.iop.org/0268-1242/29/11/115015;jsessionid=0BCF20793210276891C842A073F91561.c1
imec.availabilityPublished - imec


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