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Low-frequency-noise-based oxide trap profiling in replacement high-k/metal gate pMOSFETs

dc.contributor.authorSimoen, Eddy
dc.contributor.authorLee, Jae Woo
dc.contributor.authorVeloso, Anabela
dc.contributor.authorParaschiv, Vasile
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-22T05:52:47Z
dc.date.available2021-10-22T05:52:47Z
dc.date.issued2014
dc.identifier.issn2162-8769
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24531
dc.sourceIIOimport
dc.titleLow-frequency-noise-based oxide trap profiling in replacement high-k/metal gate pMOSFETs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageQ127
dc.source.endpageQ131
dc.source.journalECS Journal of Solid State Science and Technology
dc.source.issue6
dc.source.volume3
dc.identifier.urlhttp://jss.ecsdl.org/content/3/6/Q127.abstract?etoc
imec.availabilityPublished - open access


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