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dc.contributor.authorSlotte, Jonatan
dc.contributor.authorTuomisto, F
dc.contributor.authorKujala, J.
dc.contributor.authorHolm, A.M.
dc.contributor.authorSegercranz, N.
dc.contributor.authorKilpelainen, S.
dc.contributor.authorKuitunen, K.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorGencarelli, Federica
dc.contributor.authorLoo, Roger
dc.contributor.authorShimura, Yosuke
dc.date.accessioned2021-10-22T05:57:54Z
dc.date.available2021-10-22T05:57:54Z
dc.date.issued2014-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24541
dc.sourceIIOimport
dc.titlePositron annihilation spectroscopy on open-volume defects in group IV semiconductors
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage241
dc.source.endpage253
dc.source.conferenceHigh Purity and High Mobility Semiconductors 13
dc.source.conferencedate5/10/2014
dc.source.conferencelocationCancun Mexico
dc.identifier.url10.1149/06411.0241ecst
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 64, Issue 11


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