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Near-interfacial thermal donor generation during processing of (100)Si/low-k Si-oxycarbide insulator structures revealed by electron spin resonance

dc.contributor.authorStesmans, Andre
dc.contributor.authorIacovo, S.
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorBaklanov, Mikhaïl
dc.contributor.authorUrbanowicz, A.
dc.date.accessioned2021-10-22T06:08:46Z
dc.date.available2021-10-22T06:08:46Z
dc.date.issued2014
dc.identifier.issn0268-1242
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24563
dc.sourceIIOimport
dc.titleNear-interfacial thermal donor generation during processing of (100)Si/low-k Si-oxycarbide insulator structures revealed by electron spin resonance
dc.typeJournal article
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorAfanasiev, Valeri
dc.source.peerreviewyes
dc.source.beginpage955008
dc.source.journalSemiconductor Science and Technology
dc.source.issue9
dc.source.volume29
dc.identifier.urlhttp://iopscience.iop.org/0268-1242/29/9/095008/article
imec.availabilityPublished - imec


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