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Paramagnetic oxide defects in Sc2O3-passivated (100)Ge/HfO2 stacks

dc.contributor.authorStesmans, Andre
dc.contributor.authorIacovo, Serena
dc.contributor.authorCott, Daire
dc.contributor.authorThean, Aaron
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorSioncke, Sonja
dc.contributor.authorAfanas'ev, Valeri
dc.date.accessioned2021-10-22T06:09:14Z
dc.date.available2021-10-22T06:09:14Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24564
dc.sourceIIOimport
dc.titleParamagnetic oxide defects in Sc2O3-passivated (100)Ge/HfO2 stacks
dc.typeMeeting abstract
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorIacovo, Serena
dc.contributor.imecauthorCott, Daire
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.orcidimecIacovo, Serena::0000-0002-0826-9165
dc.source.peerreviewno
dc.source.beginpage4.2
dc.source.conference45th IEEE Semiconductor Interface Specialists Conference - SISC
dc.source.conferencedate10/12/2014
dc.source.conferencelocationSan Diego, CA USA
imec.availabilityPublished - imec


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