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TCAD methodology for simulation of GaN-HEMT power devices
Publication:
TCAD methodology for simulation of GaN-HEMT power devices
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Date
2014-06
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Strauss, Stephan
;
Axel, Erlebach
;
Tommaso, Cilento
;
Bakeroot, Benoit
;
Marcon, Denis
;
Stoffels, Steve
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1983
since deposited on 2021-10-22
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last week
Acq. date: 2026-01-06
Citations
Metrics
Views
1983
since deposited on 2021-10-22
2
last month
1
last week
Acq. date: 2026-01-06
Citations