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Use of X-ray techniques in the development of Ge MOSFET devices
Publication:
Use of X-ray techniques in the development of Ge MOSFET devices
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Date
2014
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Sun, Jianwu
;
Hikavyy, Andriy
;
Shimura, Yosuke
;
Witters, Liesbeth
;
Tielens, Hilde
;
Ryan, Paul
;
Loo, Roger
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1942
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Acq. date: 2026-02-27
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Views
1942
since deposited on 2021-10-22
1
last month
1
last week
Acq. date: 2026-02-27
Citations