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Mobility improvement study for 8-Å-EOT HfO2 UTBB-FD-SOI-MOSFET based on the direct extraction of the back channel mobility

dc.contributor.authorTrojman, Lionel
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorCollaert, Nadine
dc.date.accessioned2021-10-22T06:40:00Z
dc.date.available2021-10-22T06:40:00Z
dc.date.issued2014-11
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24627
dc.sourceIIOimport
dc.titleMobility improvement study for 8-Å-EOT HfO2 UTBB-FD-SOI-MOSFET based on the direct extraction of the back channel mobility
dc.typeJournal article
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage3632
dc.source.endpage3638
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue11
dc.source.volume61
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6909331
imec.availabilityPublished - imec


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