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On the properties of the gate and substrate current after soft breakdown in ultrathin oxide layers
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On the properties of the gate and substrate current after soft breakdown in ultrathin oxide layers
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Date
1998
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Crupi, Felice
;
Degraeve, Robin
;
Groeseneken, Guido
;
Nigam, Tanya
;
Maes, Herman
Journal
IEEE Trans. Electron Devices
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1924
since deposited on 2021-09-30
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Acq. date: 2026-01-06
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Views
1924
since deposited on 2021-09-30
1
last month
1
last week
Acq. date: 2026-01-06
Citations