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Nanoscale etching of In0.53Ga0.47As for advanced CMOS processing

dc.contributor.authorvan Dorp, Dennis
dc.contributor.authorArnauts, Sophia
dc.contributor.authorCuypers, Daniel
dc.contributor.authorRip, Jens
dc.contributor.authorHolsteyns, Frank
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorKelly, John
dc.date.accessioned2021-10-22T07:09:35Z
dc.date.available2021-10-22T07:09:35Z
dc.date.issued2014
dc.identifier.issn2162-8769
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24688
dc.sourceIIOimport
dc.titleNanoscale etching of In0.53Ga0.47As for advanced CMOS processing
dc.typeJournal article
dc.contributor.imecauthorvan Dorp, Dennis
dc.contributor.imecauthorArnauts, Sophia
dc.contributor.imecauthorRip, Jens
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecvan Dorp, Dennis::0000-0002-1085-4232
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageP179
dc.source.endpageP184
dc.source.journalECS Journal of Solid State Science and Technology
dc.source.issue6
dc.source.volume3
dc.identifier.urlhttp://jss.ecsdl.org/content/3/6/P179.full
imec.availabilityPublished - open access


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