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On the properties of the gate and substrate current after soft breakdown in ultrathin oxide layers

dc.contributor.authorCrupi, Felice
dc.contributor.authorDegraeve, Robin
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorNigam, Tanya
dc.contributor.authorMaes, Herman
dc.date.accessioned2021-09-30T11:37:32Z
dc.date.available2021-09-30T11:37:32Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2468
dc.sourceIIOimport
dc.titleOn the properties of the gate and substrate current after soft breakdown in ultrathin oxide layers
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage2329
dc.source.endpage2334
dc.source.journalIEEE Trans. Electron Devices
dc.source.issue11
dc.source.volume45
imec.availabilityPublished - open access


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