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Ultra high voltage electron microscoy study of {113}-defect generation in Si nanowires

dc.contributor.authorVanhellemont, Jan
dc.contributor.authorAnada, S.
dc.contributor.authorNagase, T.
dc.contributor.authorYasuda, H.
dc.contributor.authorBender, Hugo
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVandooren, Anne
dc.date.accessioned2021-10-22T07:34:17Z
dc.date.available2021-10-22T07:34:17Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24738
dc.sourceIIOimport
dc.titleUltra high voltage electron microscoy study of {113}-defect generation in Si nanowires
dc.typeProceedings paper
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVandooren, Anne
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.source.peerreviewyes
dc.source.beginpagena
dc.source.conferenceIn-situ Characterization of Material Synthesis and Properties at the Nanoscale with TEM
dc.source.conferencedate21/04/2014
dc.source.conferencelocationSan Francisco, CA USA
dc.identifier.urlhttp://dx.doi.org/10.1557/opl.2014.895
imec.availabilityPublished - imec
imec.internalnotesMRS Symposium Proceedings; Vol. 1713


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