Show simple item record

On the impact of dopants and Si structure dimensions on {113}-defect formation during in-situ 2 MeV electron-irradiation in an UHVEM

dc.contributor.authorVanhellemont, Jan
dc.contributor.authorAnada, Satoshi
dc.contributor.authorNagase, Takeshi
dc.contributor.authorYasuda, H.
dc.contributor.authorSchulze, Andreas
dc.contributor.authorBender, Hugo
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVandooren, Anne
dc.date.accessioned2021-10-22T07:34:47Z
dc.date.available2021-10-22T07:34:47Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24739
dc.sourceIIOimport
dc.titleOn the impact of dopants and Si structure dimensions on {113}-defect formation during in-situ 2 MeV electron-irradiation in an UHVEM
dc.typeMeeting abstract
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVandooren, Anne
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.source.peerreviewno
dc.source.conferenceExtended Defects in Semiconductors - EDS
dc.source.conferencedate14/09/2014
dc.source.conferencelocationGottingen Germany
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record