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Interplay between metallization and strain relaxation in epitaxial GeSn layers

dc.contributor.authorVantomme, Andre
dc.contributor.authorSantos, N.
dc.contributor.authorVan Stiphout, K.
dc.contributor.authorNakatsuka, Osamu
dc.contributor.authorMasaki, A.
dc.contributor.authorShimura, Yosuke
dc.contributor.authorLoo, Roger
dc.contributor.authorZaima, Shigeaku
dc.contributor.authorDe Tavernier, C,
dc.contributor.authorTemst, Kristiaan
dc.contributor.authorComrie, C. M.
dc.date.accessioned2021-10-22T07:39:38Z
dc.date.available2021-10-22T07:39:38Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24748
dc.sourceIIOimport
dc.titleInterplay between metallization and strain relaxation in epitaxial GeSn layers
dc.typeMeeting abstract
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorTemst, Kristiaan
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.conferenceJSPS International Core-to-Core Program Workshop on Atomically Controlled Processing for Ultra-Large Scale Integration
dc.source.conferencedate13/11/2014
dc.source.conferencelocationLeuven Belgium
imec.availabilityPublished - imec


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