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A conductive AFM nanoscale analysis of NBTI and channel hot-carriers degradation in MOSFETs

dc.contributor.authorWu, Qian
dc.contributor.authorBayerl, A.
dc.contributor.authorPorti, Marc
dc.contributor.authorMartin-Martinez, Javier
dc.contributor.authorLanza, Mario
dc.contributor.authorRodiguez, Rosanna
dc.contributor.authorVelayudhan, Vikas
dc.contributor.authorNafria, Montserrat
dc.contributor.authorAymerich, Xavier
dc.contributor.authorGonzalez, Mireia B
dc.contributor.authorSimoen, Eddy
dc.date.accessioned2021-10-22T08:28:12Z
dc.date.available2021-10-22T08:28:12Z
dc.date.issued2014
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24837
dc.sourceIIOimport
dc.titleA conductive AFM nanoscale analysis of NBTI and channel hot-carriers degradation in MOSFETs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage3118
dc.source.endpage3124
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue9
dc.source.volume61
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6880443
imec.availabilityPublished - open access


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