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High performance Si0.45Ge0.55 implant free quantum well pFET with enhanced mobility by low temperature process and transverse strain relaxation

dc.contributor.authorYamaguchi, Shimpei
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorMitard, Jerome
dc.contributor.authorEneman, Geert
dc.contributor.authorHellings, Geert
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.authorHoriguchi, Naoto
dc.date.accessioned2021-10-22T08:39:18Z
dc.date.available2021-10-22T08:39:18Z
dc.date.issued2014-12
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24857
dc.sourceIIOimport
dc.titleHigh performance Si0.45Ge0.55 implant free quantum well pFET with enhanced mobility by low temperature process and transverse strain relaxation
dc.typeJournal article
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage3985
dc.source.endpage3990
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue12
dc.source.volume61
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6951372
imec.availabilityPublished - open access


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