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Heavy ion and laser induced charge collection in SiGe bulk PMOSFETs

dc.contributor.authorZhang, E.X.
dc.contributor.authorSamsel, I.K.
dc.contributor.authorHooten, N.C.
dc.contributor.authorBennett, W.G.
dc.contributor.authorFunkhouser, E.D.
dc.contributor.authorKai, N.
dc.contributor.authorBall, D.R.
dc.contributor.authorMcCurdy, M.W.
dc.contributor.authorFleetwood, D.M.
dc.contributor.authorReed, R.A.
dc.contributor.authorAlles, M.C.
dc.contributor.authorSchrimpf, R.D.
dc.contributor.authorLinten, Dimitri
dc.contributor.authorMitard, Jerome
dc.date.accessioned2021-10-22T08:52:12Z
dc.date.available2021-10-22T08:52:12Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24880
dc.sourceIIOimport
dc.titleHeavy ion and laser induced charge collection in SiGe bulk PMOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorMitard, Jerome
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.source.peerreviewyes
dc.source.beginpagePE-4
dc.source.conferenceIEEE Nuclear & Space Radiation Effects Conference - NSREC
dc.source.conferencedate14/07/2014
dc.source.conferencelocationParis France
imec.availabilityPublished - imec


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