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In0.53Ga0.47As quantum-well MOSFET with source-drain regrowth for low power logic applications

dc.contributor.authorZhou, Daisy
dc.contributor.authorAlian, AliReza
dc.contributor.authorMols, Yves
dc.contributor.authorRooyackers, Rita
dc.contributor.authorLin, Dennis
dc.contributor.authorIvanov, Tsvetan
dc.contributor.authorPourghaderi, Mohammad Ali
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-22T09:00:19Z
dc.date.available2021-10-22T09:00:19Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24894
dc.sourceIIOimport
dc.titleIn0.53Ga0.47As quantum-well MOSFET with source-drain regrowth for low power logic applications
dc.typeProceedings paper
dc.contributor.imecauthorZhou, Daisy
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorIvanov, Tsvetan
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecIvanov, Tsvetan::0000-0003-3407-2742
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage208
dc.source.endpage209
dc.source.conferenceIEEE International Symposium on VLSI Technology
dc.source.conferencedate9/06/2014
dc.source.conferencelocationHonolulu, HI USA
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6894419
imec.availabilityPublished - open access


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