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A novel resist and post-etch residue removal process using ozonated chemistries

dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorSnee, Peter
dc.contributor.authorCornelissen, Ingrid
dc.contributor.authorLux, Marcel
dc.contributor.authorVos, Rita
dc.contributor.authorMertens, Paul
dc.contributor.authorKnotter, D. M.
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-09-30T11:41:30Z
dc.date.available2021-09-30T11:41:30Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2491
dc.sourceIIOimport
dc.titleA novel resist and post-etch residue removal process using ozonated chemistries
dc.typeProceedings paper
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorCornelissen, Ingrid
dc.contributor.imecauthorLux, Marcel
dc.contributor.imecauthorVos, Rita
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage168
dc.source.endpage169
dc.source.conferenceIEEE VLSI Technology Symposium
dc.source.conferencedate9/09/1998
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - open access


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