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dc.contributor.authorAlian, AliReza
dc.contributor.authorFranco, Jacopo
dc.contributor.authorVandooren, Anne
dc.contributor.authorMols, Yves
dc.contributor.authorVerhulst, Anne
dc.contributor.authorEl Kazzi, Salim
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVerreck, Devin
dc.contributor.authorSmets, Quentin
dc.contributor.authorMocuta, Anda
dc.contributor.authorCollaert, Nadine
dc.contributor.authorLin, Dennis
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-22T18:30:22Z
dc.date.available2021-10-22T18:30:22Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24934
dc.sourceIIOimport
dc.titleRecord performance InGaAs homo-junction TFET with superior SS reliability over MOSFET
dc.typeProceedings paper
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorVerreck, Devin
dc.contributor.imecauthorSmets, Quentin
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.contributor.orcidimecSmets, Quentin::0000-0002-2356-5915
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage823
dc.source.endpage826
dc.source.conferenceInternational Electron Devices Meeting - IEDM
dc.source.conferencedate7/12/2015
dc.source.conferencelocationWashington USA
imec.availabilityPublished - open access


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