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Analysis of the time-dependent electrical current in reverse-biased p-GeSn/n-Ge mesa diodes

dc.contributor.authorBaert, Bruno
dc.contributor.authorGupta, Somya
dc.contributor.authorGencarelli, Federica
dc.contributor.authorLoo, Roger
dc.contributor.authorSimoen, Eddy
dc.contributor.authorNguyen, Duy
dc.date.accessioned2021-10-22T18:30:56Z
dc.date.available2021-10-22T18:30:56Z
dc.date.issued2015-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24949
dc.sourceIIOimport
dc.titleAnalysis of the time-dependent electrical current in reverse-biased p-GeSn/n-Ge mesa diodes
dc.typeMeeting abstract
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.conferenceE-MRS Fall Symposium O: Alternative Semiconductor Integration in Si Microelectronics: Materials, Techniques and Appl.
dc.source.conferencedate14/09/2015
dc.source.conferencelocationWarsaw Poland
imec.availabilityPublished - imec


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