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Current transients in reverse-biased p-GeSn/n-Ge diodes

dc.contributor.authorBaert, Bruno
dc.contributor.authorGupta, Somya
dc.contributor.authorGencarelli, Federica
dc.contributor.authorShimura, Yosuke
dc.contributor.authorLoo, Roger
dc.contributor.authorSimoen, Eddy
dc.contributor.authorNguyen, Ngoc Duy
dc.date.accessioned2021-10-22T18:30:58Z
dc.date.available2021-10-22T18:30:58Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24950
dc.sourceIIOimport
dc.titleCurrent transients in reverse-biased p-GeSn/n-Ge diodes
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage111
dc.source.endpage112
dc.source.conferenceInternational Conference on Silicon Epitaxy and Heterostructures - ICSI-9
dc.source.conferencedate17/05/2015
dc.source.conferencelocationMontreal Canada
imec.availabilityPublished - imec


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