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dc.contributor.authorBelmonte, Attilio
dc.contributor.authorCelano, Umberto
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorFantini, Andrea
dc.contributor.authorMuller, Robert
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorHoussa, Michel
dc.contributor.authorJurczak, Gosia
dc.contributor.authorGoux, Ludovic
dc.date.accessioned2021-10-22T18:32:24Z
dc.date.available2021-10-22T18:32:24Z
dc.date.issued2015
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24978
dc.sourceIIOimport
dc.titleAnalysis of the excellent memory disturb characteristics of a hourglass-shaped filament in Al2O3/Cu-based CBRAM devices
dc.typeJournal article
dc.contributor.imecauthorBelmonte, Attilio
dc.contributor.imecauthorCelano, Umberto
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.orcidimecCelano, Umberto::0000-0002-2856-3847
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage2007
dc.source.endpage2013
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue6
dc.source.volume62
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7103322/?arnumber=7103322
imec.availabilityPublished - open access


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