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Proton radiation effects on the analog performance of bulk n- and p-FinFETs

dc.contributor.authorBertoldo, M.
dc.contributor.authorOliveira, A.V.
dc.contributor.authorAgopian, Paula G.D.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorMartino, Joao Antonio
dc.date.accessioned2021-10-22T18:32:55Z
dc.date.available2021-10-22T18:32:55Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24986
dc.sourceIIOimport
dc.titleProton radiation effects on the analog performance of bulk n- and p-FinFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage295
dc.source.endpage301
dc.source.conferenceAdvanced CMOS-Compatible Semiconductor Devices 17
dc.source.conferencedate24/05/2015
dc.source.conferencelocationChicago, IL USA
dc.identifier.urlhttp://ecst.ecsdl.org/content/66/5/295.abstract
imec.availabilityPublished - imec
imec.internalnotesECS Proceedings; Vol. 66, Iss. 5


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