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Impact of the diameter of vertical nanowire-tunnel FETs with Si and SiGe source composition on analog parameters

dc.contributor.authorBordallo, C. C. M
dc.contributor.authorSivieri, V. B
dc.contributor.authorMartino, J. A.
dc.contributor.authorAgopian, P. G. D
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVandooren, Anne
dc.contributor.authorSimoen, Eddy
dc.contributor.authorThean, Aaron
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-22T18:34:06Z
dc.date.available2021-10-22T18:34:06Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25003
dc.sourceIIOimport
dc.titleImpact of the diameter of vertical nanowire-tunnel FETs with Si and SiGe source composition on analog parameters
dc.typeProceedings paper
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage253
dc.source.endpage256
dc.source.conferenceJoint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon - EUROSOI-ULIS
dc.source.conferencedate26/01/2015
dc.source.conferencelocationBologna Italy
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7063821
imec.availabilityPublished - open access


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