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Physical characterization of Cu2ZnGeSe4 thin films from annealing of Cu-Zn-Ge precursor layers

dc.contributor.authorBuffiere, Marie
dc.contributor.authorElAnzeery, Hossam
dc.contributor.authorOueslati, Souhaib
dc.contributor.authorBen Messaoud, Khaled
dc.contributor.authorBrammertz, Guy
dc.contributor.authorMeuris, Marc
dc.contributor.authorPoortmans, Jef
dc.date.accessioned2021-10-22T18:36:05Z
dc.date.available2021-10-22T18:36:05Z
dc.date.issued2015
dc.identifier.issn0040-6090
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25026
dc.sourceIIOimport
dc.titlePhysical characterization of Cu2ZnGeSe4 thin films from annealing of Cu-Zn-Ge precursor layers
dc.typeJournal article
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage171
dc.source.endpage175
dc.source.journalThin Solid Films
dc.source.volume582
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S004060901400902X
imec.availabilityPublished - imec


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