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TCAD strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs

dc.contributor.authorBuhler, Rudolf
dc.contributor.authorEneman, Geert
dc.contributor.authorFavia, Paola
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorVincent, Benjamin
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.authorBender, Hugo
dc.contributor.authorCollaert, Nadine
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMartino, Joao
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-22T18:36:12Z
dc.date.available2021-10-22T18:36:12Z
dc.date.issued2015
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25027
dc.sourceIIOimport
dc.titleTCAD strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs
dc.typeJournal article
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1079
dc.source.endpage1084
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue4
dc.source.volume62
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7041203
imec.availabilityPublished - open access


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