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TCAD strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs
Publication:
TCAD strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs
Date
2015
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Buhler, Rudolf
;
Eneman, Geert
;
Favia, Paola
;
Witters, Liesbeth
;
Vincent, Benjamin
;
Hikavyy, Andriy
;
Loo, Roger
;
Bender, Hugo
;
Collaert, Nadine
;
Simoen, Eddy
;
Martino, Joao
;
Claeys, Cor
Journal
IEEE Transactions on Electron Devices
Abstract
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1869
since deposited on 2021-10-22
1
last week
Acq. date: 2025-10-29
Citations
Metrics
Views
1869
since deposited on 2021-10-22
1
last week
Acq. date: 2025-10-29
Citations