Publication:

TCAD strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs

Date

2015
Journal article
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dc.contributor.authorBuhler, Rudolf
dc.contributor.authorEneman, Geert
dc.contributor.authorFavia, Paola
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorVincent, Benjamin
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.authorBender, Hugo
dc.contributor.authorCollaert, Nadine
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMartino, Joao
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-22T18:36:12Z
dc.date.available2021-10-22T18:36:12Z
dc.date.embargo9999-12-31
dc.date.issued2015
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25027
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7041203
dc.source.beginpage1079
dc.source.endpage1084
dc.source.issue4
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume62
dc.title

TCAD strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs

dc.typeJournal article
dspace.entity.typePublication
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