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Characterization of self-heating in high-mobility Ge FinFET pMOS devices

dc.contributor.authorBury, Erik
dc.contributor.authorKaczer, Ben
dc.contributor.authorMitard, Jerome
dc.contributor.authorCollaert, Nadine
dc.contributor.authorKhatami, N.S.
dc.contributor.authorAksamija, Zlatan
dc.contributor.authorVasileska, Dragica
dc.contributor.authorRaleva, Katerina
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorHellings, Geert
dc.contributor.authorLinten, Dimitri
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-22T18:36:24Z
dc.date.available2021-10-22T18:36:24Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25029
dc.sourceIIOimport
dc.titleCharacterization of self-heating in high-mobility Ge FinFET pMOS devices
dc.typeProceedings paper
dc.contributor.imecauthorBury, Erik
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecBury, Erik::0000-0002-5847-3949
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.source.peerreviewyes
dc.source.beginpage60
dc.source.endpage61
dc.source.conferenceIEEE Symposium on VLSI Technology
dc.source.conferencedate15/06/2015
dc.source.conferencelocationKyoto Japan
imec.availabilityPublished - imec


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