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Ultra-thin oxide growth on silicon using ozonated solutions

dc.contributor.authorDe Smedt, Frank
dc.contributor.authorVinckier, Chris
dc.contributor.authorCornelissen, Ingrid
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorMeuris, Marc
dc.contributor.authorGilis, G.
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-09-30T11:43:45Z
dc.date.available2021-09-30T11:43:45Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2504
dc.sourceIIOimport
dc.titleUltra-thin oxide growth on silicon using ozonated solutions
dc.typeOral presentation
dc.contributor.imecauthorCornelissen, Ingrid
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewno
dc.source.conference4th International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSS
dc.source.conferencedate21/09/1998
dc.source.conferencelocationOostende Belgium
imec.availabilityPublished - imec
imec.internalnotesPubl. in 1999; Zie C3333


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