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Engineering of a TiN\Al2O3\(Hf,Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current

dc.contributor.authorChen, Michael
dc.contributor.authorGoux, Ludovic
dc.contributor.authorFantini, Andrea
dc.contributor.authorDegraeve, Robin
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-22T18:40:19Z
dc.date.available2021-10-22T18:40:19Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25065
dc.sourceIIOimport
dc.titleEngineering of a TiN\Al2O3\(Hf,Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current
dc.typeProceedings paper
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.source.peerreviewyes
dc.source.beginpage262
dc.source.endpage265
dc.source.conference45th European Solid State Devices and Research Conference - ESSDERC
dc.source.conferencedate14/09/2015
dc.source.conferencelocationGraz Austria
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7324764
imec.availabilityPublished - imec


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