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Low-current operation of novel TiN\Gd-Al-O\Hf RRAM cells with large memory window

dc.contributor.authorChen, Michael
dc.contributor.authorGoux, Ludovic
dc.contributor.authorFantini, Andrea
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-22T18:40:26Z
dc.date.available2021-10-22T18:40:26Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25066
dc.sourceIIOimport
dc.titleLow-current operation of novel TiN\Gd-Al-O\Hf RRAM cells with large memory window
dc.typeOral presentation
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.source.peerreviewno
dc.source.conferenceE-MRS Spring Meeting Symposium AA: Non-Volatile Memories: Materials, Nanostructures and Integration Approaches
dc.source.conferencedate11/05/2015
dc.source.conferencelocationLille France
imec.availabilityPublished - imec


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